Abstract
The effect of scaling down the channel width on the threshold voltage of deep submicron MOSFETs with LOCOS isolation has been investigated. Previous results, obtained from 1 μm technology and above, show an increase in threshold voltage as the width is reduced. However, in deep submicron technology, oxide thickness is scaled-down and channel doping is increased to avoid punchthrough and maintain a sufficiently high threshold voltage. This results in a threshold voltage reduction as channel width is scaled-down—the so called Inverse-Narrow-Width-Effect (INWE). The trend is explained through dopant redistribution and is verified by both experiment and process simulation. Lastly, a new narrow width threshold voltage model is proposed to account for the dopant redistribution effect.
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