Inverse photoemission study of non-reconstructed Si(111) surfaces: a comparison between HSi(111) 1 × 1 and As:Si(111) 1 × 1

Abstract

The lower conduction-band states of Si(111) have been measured by k |-resolved inverse photoelectron spectroscopy (KRIPES) on non-reconstructed surfaces obtained either by saturating the dangling bonds with atomic hydrogen or by replacing the Si surface atoms with As atoms. On the HSi(111)1 × 1 surface, two conduction bands are measured whose asymmetry in the q̄G-M̄ direction reveals their bulk character. The same conduction band states are also measured on the As:Si(111)1 × 1 surface, however at lower energies as a result of the higher electronegativity of the As atoms. These latter data are in excellent agreement with recent calculations using the quasi-particle formalism.