Abstract
Unoccupied bulk and surface electronic states of InP, InAs, and InSb are determined via inverse photoemission from their cleaved (110) surfaces. With use of a tunable photon detector, the band dispersion of the lowest p-like bands along the \ensuremath{\Gamma}\ensuremath{\Sigma}KX line is mapped and the critical points ${\ensuremath{\Gamma}}_{15}$ and ${X}_{1}$ of the conduction band are determined (${\ensuremath{\Gamma}}_{15}$=5.3, 4.5, and 4.2 eV and ${X}_{1}$=2.8, 1.9, and 1.8 eV, for InP, InAs, InSb, respectively). Surface resonances are found in the region 1.9--2.7 eV above the valence-band maximum. Resonance effects near the In 4d core-level threshold and the onset of In 4d luminescence are studied.
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