Inverse optical scatterometry using sketch-guided deep learning

Abstract

Optical scatterometry, also referred to as optical critical dimension (OCD) metrology, is a widely used technique for characterizing nanostructures in semiconductor industry. As a model-based optical metrology, the measurement in optical scatterometry is not straightforward but involves solving a complicated inverse problem. So far, the methods for solving the inverse scattering problem, whether traditional or deep-learning-based, necessitate a predefined geometric model, but they are also constrained by this model with poor applicability. Here, we demonstrate a sketch-guided neural network (SGNN) for nanostructure reconstruction in optical scatterometry. By learning from training data based on the designed generic profile model, the neural network acquires not only scattering knowledge but also sketching techniques, that allows it to draw the profiles corresponding to the input optical signature, regardless of whether the sample structure is the same as the generic profile model or not. The accuracy and strong generalizability of proposed approach is validated by using a series of one-dimensional gratings. Experiments have also demonstrated that it is comparable to nonlinear regression methods and outperforms traditional deep learning methods. To our best knowledge, this is the first time that the concept of sketching has been introduced into deep learning for solving the inverse scattering problem. We believe that our method will provide a novel solution for semiconductor metrology, enabling fast and accurate reconstruction of nanostructures.