Abstract
The double-base diffusion process is introduced and is experimentally shown to significantly improve the inverse or upward current gain of the n-p-n bipolar transistor. The technique consists of a deep p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> diffusion into an external base region of multicollector transistors forming a close-in collar around the intrinsic base of each transistor. This technique, together with the use of deep diffusion n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> guard rings around the complete unit cell, is shown to improve the inverse current gain significantly.
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