Abstract
The effect of Cr(001) insertion layers in Fe(001)/MgO/Cr/Fe magnetic tunneling junctions is studied from first principles. It is shown that with the increase in the Cr(001) layer thickness, the tunneling magnetoresistance (TMR) first decreases rapidly and then oscillates with a two-monolayer period. At some thicknesses, the oscillation leads to a sign reversal of the TMR. The oscillatory interfacial Cr moment at the Cr-MgO interface as a function of the Cr layer thickness, which arises from the layer-antiferromagnetic ordering of Cr, is the cause for the oscillatory TMR.
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