Abstract
The interfaces formed by Si evaporated onto a Ni(100) surface have been studied by ultraviolet photoemission and inverse photoemission spectroscopy in the VUV range. It is found that at room temperature the first stage of compound formation corresponds to a “Ni 2Si” type silicide; as more and more silicon is deposited on the clean Ni surface, a NiSi-like phase is obtained and then finally amorphous silicon is observed for high coverage.
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