Abstract
This special section of the IEEE Journal of Electron Devices Society is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA. The papers were selected based their technical merits and relevance to the Journal and with the feedback from the Technical Committee of the conference and session chairs.
Highlights
Introduction to the SpecialSection on the 2018 IEEE S3S ConferenceT HIS special section of the IEEE JOURNAL OF ELECTRON DEVICES SOCIETY is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA
In the paper, study the process dependence of the soft errors in 65nm thin BOX FDSOI devices induced by α particles as well as heavy ions and high energy neutrons
Chung et al report one-time programmable (OTP) fuses fabricated in 22nm FDSOI technology
Summary
Introduction to the Special Section on the 2018 IEEE S3S Conference T HIS special section of the IEEE JOURNAL OF ELECTRON DEVICES SOCIETY is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA. The conference has been the flagship IEEE event to cover SOI technology for over four decades. In the past few years, we have expanded the focus of the conference to include 3D integration, building on the synergy between SOI technology, low-voltage device technology and 3D wafer processing and aiming to address the challenges of energy efficient information processing.
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