Introduction to the issue on semiconductor lasers

Abstract

HE FIELD of semiconductor lasers has continued to grow with increased understanding of basic phenomenon in both materials issues and device design. The accelerated demand for semiconductor laser devices with ever-increasing performance for communication applications has further bolstered the need to develop and understand the operation of these devices. New and more stringent applications have increased interest in both shorter and longer wavelength devices, and in higher power devices at all wavelengths. This has pushed the development of devices in other material systems, such as nitride- and Sb-based materials, in addition to the more traditional GaAs- and InP-based systems, and is leading to the development of mixed-material system devices. This trend is seen in the range of the approximate 40 papers contained in this special issue. Increased performance and understanding of long wavelength devices for application to fiber transmission systems continues with improved operation of single-frequency and vertical-cavity surface-emitting lasers (VCSELs) at 1.3 and 1.5 m fiber wavelengths. The incorporation of nitrogen in quantum structures grown on GaAs has pushed the wavelength of GaAs-based lasers to over 1.5 m. Tunable lasers for dense wavelength-division-multiplexing (DWDM) applications, as well as demand for distributed feedbacks (DFBs) with inte