Introduction of the Arabidopsis PHYB gene increases resistance of photosynthetic apparatus in transgenic Solanum tuberosum plants to UV-B radiation

Abstract

The influence of phytochrome B overproduction in 50- to 60-day-old transgenic potato plants (Solanum tuberosum L., lines Dara 5 and Dara 12 with moderate and intense expression of PHYB, respectively) on the resistance of photosynthetic apparatus to UV-B irradiation was investigated. In plants unexposed to UV-B, there was no significant difference in photosynthetic rates (P n) and fluorescence parameters (F v/F m, qN, qP) between the nontransformed (NT) line and Dara-5 and Dara-12 lines, whereas the content of photosynthetic pigments per 1 cm2 leaf area was higher in the transgenic plants. Irradiation with UV-B resulted in the decrease in photosynthetic rate in NT plants by 35–45%, whereas in Dara-12 line this rate was lowered by only 20–25%. Exposure to UV-B reduced the amplitudes of both fast and slow components of delayed fluorescence (DF), which indicated the diminished efficiency of photosystem II (PSII). The decrease in the maximum amplitude of the slow DF component was markedly lower in Dara-12 (19%) than in NT line (33%). The maximal photochemical quantum yield of PSII (F v/F m ratio) in plants exposed to UV-B was also suppressed stronger in NT line than in Dara-12. The line Dara-5 had intermediate position among other lines in terms of UV-B resistance of photosynthesis and PSII activity, but it was closer to NT than to Dara-12. Thus, the potato plants actively expressing the gene of Arabidopsis phytochrome B apoprotein (PHYB) demonstrated a higher resistance of photosynthetic apparatus to UV-B radiation compared to nontransformed plants. The elevated UV-B tolerance is most likely related to the increased leaf content of chlorophyll, carotenoids, and flavonoids.