Introduction of atomic H into Si 3N 4/SiO 2/Si stacks

Abstract

Atomic H generated by a plasma NH 3 source at 400 °C was demonstrated to passivate dehydrogenated Si 3N 4/SiO 2/Si stacks effectively by bonding with defects in the Si 3N 4 film and at the Si-SiO 2 interface. A subsequent anneal in N 2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO 2 interface. Isothermal and isochronal anneals in N 2 were carried out in order to determine the optimized annealing conditions.