Abstract
In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
