Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs

Abstract

The drain current of the amorphous InGaZnO thin-film transistors (TFTs) shows the Arrhenius and the non-Arrhenius dependence at the high temperature and the low temperature respectively. The gate-voltage-dependent effective temperature is introduced into the Arrhenius equation. Considering the normal Meyer-Neldel (MN) rule and the inverse MN rule, the equation successfully describes both the Arrhenius and the non-Arrhenius dependent drain current at the low and the high gate voltage. The calculated results of the equation are verified by the available experimental data of the amorphous La-doped InZnO TFT and the amorphous InGaZnO (InO3:Ga2O3:ZnO = 1:1:1 mol%) TFT.