Introducing a thin MnO2 layer in Co3O4-based memory to enhance resistive switching and magnetization modulation behaviors

Abstract

Nanocrystalline bilayer composite MnO2/Co3O4 thin films were fabricated by a simple chemical solution deposition method to investigate the resistive and magnetization switching properties. Compared with pure Co3O4 thin films device, bilayer MnO2/Co3O4 thin films device exhibits enhancement in resistive switching (RS) and magnetization modulation, such as uniform SET and RESET voltages, stable cycle-to-cycle switching endurance (>2 × 103 cycles), good data retention time (>104 s), and RS induced magnetization switching (∼63%). Through the analysis of fitting current-voltage (I–V) curves and temperature-dependent resistance, it demonstrated that Schottky emission conduction is dominated at high resistance state of the devices. Enhancement in RS performance can be attributed to the growth and dissolution of confined conductive filaments which are composed of Mn atoms and oxygen vacancies, evidenced by temperature dependence and magnetization switching at different resistance states. The physical relevancy between RS and magnetic switching involves in the creation and annihilation of conductive filaments, associated with the reversible conversion of cation valence state (Co2+ and Co3+, Mn ions and Mn atoms). Results suggest that by introducing a thin MnO2 inserting layer, Co3O4 based device shows promising applications for nonvolatile RS memory and multifunctional electromagnetic coupling device.