Introducing a new atomic parameter of energy scale for wideband semiconductors and binary materials

Abstract

The fundamental concept in the science of dislocations is the study of the optical properties of semiconductors. The purpose of this work is to investigate the dependence of the structural features of the low-temperature photo luminescence (LTPL) spectra with the lattice parameters of wideband semiconductors and binary materials. A decoding method of the LTPL spectra of the binary polytypic structures of SiC was used. As a result, we introduce here for the first time a new i-unit atomic parameter of energy scale for the LTPL spectra of binary polytypic nanostructures. The i-unit parameter equals 4.3 meV, i.e. which equals 1/2 of the distance between adjacent Si–C layers and gives the exact multiples of the basic spectral parameters to tenths of meV. The i-unit of energy scale allows the simplifying method of spectral analysis of fine structures in SiC polytypes. The proposed new atomic i-scale allows us to monitor the processes of phase transformations up to 0.0787 A. This allows observing the displacement in tetrahedron of silicon and carbon with dimensions 7.56 A. The introduction of a new energy parameter makes it possible to control the displacement and position of atoms with very high accuracy, which in turn is very important for understanding the nature of defects in semiconductors. It is shown that phase transformations in SiC are related to dislocation in the crystal and implemented by the deformation and diffusion mechanisms. Due to results the diagram of the interlayer scheme radiative recombination with resulting dislocation levels was introduced.