Introduce of a New Double Hetero FinFET Based on Charge-Plasma Concept

Abstract

Switching speed and leakage current in junctionless FinFETs, has become a challenge. An effective way to overcome these challenges is to use the combination of double hetero-dielectric and double hetero-gate (DHE) materials. Three dimensional (3D) simulation of hetero-dielectric triple-gate junctionless Fin Field Effect Transistor (DHE-FinFET) is done and evaluated by SILVACO-ATLAS simulator. Mode Space Non-Equilibrium Green’s Function (NEGF) method is utilized in order to analyze the proposed structure. In this paper, we present a combination of an asymmetrical hetero-dielectric insulator junctionless triple-gate FinFET structure that has been engineered by a specific DHE and charge plasma concept, simultaneously. The modification of the electric field along the channel region due to accumulattion of the holes near the source edge is introduced as the main reason for the improvement of the electrical characteristics in comparison with a conventional structure. The results show that the DHE-FinFET structure has shown considerable improvement on Ioff, Ion/Ioff current ratio and also the analog characteristic like Av = gm/gd has also been shown to be superior to one conventional. The promoted electrical performance of DHE-FinFET makes it a suitable device for high speed applications.