Abstract
Recent years have witnessed a surge of research in two-dimensional (2D) ferroelectric structures that may circumvent the depolarization effect in conventional perovskite oxide films. Herein, by first-principles calculations, we predict that an orthorhombic phase of lead(II) oxide, PbO, serves as a promising candidate for 2D ferroelectrics with good stability. With a semiconducting nature, 2D ferroelectric PbO exhibits intrinsic valley polarization, which leads to robust ferroelectricity with an in-plane spontaneous polarization of 2.4 × 10-10 C/m and a Curie temperature of 455 K. Remarkably, we reveal that the ferroelectricity is strain-tunable, and ferroelasticity coexists in the PbO film, implying the realization of 2D multiferroics. The underlying physical mechanism is generally applicable and can be extended to other oxide films such as ferroelectric SnO and GeO, thus paving an avenue for future design and fabrication of functional ultrathin devices that are compatible with Si-based technology.
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