Abstract
Thin films with ultrafine Si nanocrystals and ultraviolet (UV) light emission were prepared by using reactive sputtering of SiO2 and Al targets. The reaction of Al and SiO2 leads to the formation of ultrafine Si nanocrystals with compact Al2O3 shell. Al2O3 shell retards the growth of Si nanocrystals and provides ideal passivation on Si nanocrystals. Intrinsic UV photoluminescence is ascribed to the quantum-confinement effect of Si nanocrystals.
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