Abstract
The recent success to synthesize an ordered array of pores in graphene by a bottom-up approach (Moreno et al 2018 Science 360 199) yields a semiconducting nanoporous graphene with a bandgap of 0.6 eV. In this paper, we present calculations of the intrinsic carrier mobility in this new type of two-dimensional material. Using a fully atomistic approach, we show that carriers are mostly scattered by acoustic phonons, approximately like in semiconducting carbon nanotubes. The carrier mobility shows strong anisotropy and is as high as 800 cm2 (Vs)−1 at low carrier density. Such a high mobility, together with symmetric properties of electrons and holes, suggests that porous graphene is a promising candidate for next generations of complementary field-effect transistor technology.
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