Abstract
The electronic structure of the (110) face of GaAs, GaP and InSb is investigated using a realistic tight-binding model. Calculations of the surface band structure are presented and the nature of the various surface bands is discussed. The results are in agreement with the experimental data and provide a quantitative description of the cation-derived surface states lying in the bulk band gap.
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Schedule a callMore From: Journal of physics. Condensed matter : an Institute of Physics journal
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