Abstract
It is well established that the growth of Ge on Si(001) proceeds by Stranski–Krastanov mode, i.e. 3D islands (“hut” and macroscopic clusters) nucleate on top of a 3–4 ML thick pseudomorphic layer. Here, we present in-situ intrinsic stress measurements of Ge/Si(001) up to the film thicknesses at which the 3D islands percolate. From the film stress – and supported by AFM investigations – three stages of film growth characterised by different reliefs of the misfit strain can be discriminated: (1) the pseudomorphic layer-by-layer stage, (2) nucleation and growth and (3) coalescence of 3D islands.
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