Abstract
Resistive switching behaviors are described in sil- icon oxide (SiOx) systems employing vertical E/SiOx/ E( E denotes the electrode) structures. The switching is largely independent of the electrode material and attributed to the intrinsic properties of SiOx. Based on the recent experimen- tal observation (Yao et al. in Nano Lett. 10:4105, 2010 )o f a silicon filament embedded in the SiOx matrix, we further discuss the switching mechanism in light of the measured electrical phenomena. The set voltages are largely SiOx- thickness independent, consistent with the mechanistic pic- ture of point switching in the silicon filament. The multi- state switching and shifts in the set voltages with respect to the reset voltages are consistent with an electrochemical re- dox process (Si ↔ SiOy) at the switching site.
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