Abstract

In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height / the fin width) of 16-nm multi-gate MOSFET and device's intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n- and p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For n- and p-type current mirror circuits, IOUT fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.

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