Abstract
An investigation is presented into intrinsic parameter fluctuations in thin-body SOI MOSFETs due to local variations in body thickness as a result of interface roughness. A series of well scaled devices from 15 nm channel length down to 5 nm are investigated using three-dimensional drift-diffusion simulations which include the density gradient equation to account for quantum mechanical effects. It is shown that the intrinsic parameter variations are enhanced by the quantum mechanical confinement within the channel of the device. A comparison with parameter fluctuations due to discrete random doping in the source and drain is also presented.
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