Abstract
We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility (μFEi) and parasitic resistance in source (Rs) and drain (Rd) electrodes was performed especially for low VGS and VDS conditions. The resulting μFEi showed typical VGS dependency of amorphous semiconductor TFTs. However, Rs and Rd showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs.
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