Abstract
The cyclotron-resonance method reveals the drift mobility of carriers in semiconductors, which determines a device's (opto)electronic functionality. However, determining the intrinsic mobility value without interference from other carriers, dislocations, impurities, etc. remains challenging. By minimizing the density of photoexcited carriers in ultrapure diamond, the authors find an extraordinarily narrow cyclotron-resonance curve for electrons in diamond at 3 K. In this manner they obtain a corrected mobility value of 10${}^{8}$ cm${}^{2}$ V${}^{\ensuremath{-}1}$ s${}^{\ensuremath{-}1}$, a 16-fold increase compared to the previous record value for diamond.
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