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Abstract
The improved structural perfection of GaAs/AlAs ultrathin-layer superlattices (UTLSs) having a configuration close to the type-I/type-II (direct/indirect) cross-over allowed us to separate the intrinsic luminescence due to quasi-free excitons from the luminescence due to localized excitons. The observed narrow linewidth made feasible the accurate determination of the energies of the direct (Γ) and indirect (X) minima and their dependence on the UTLS parameters. The measured values are in excellent agreement with recent calculations.
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