Intrinsic limitations for CMOS with high-k gate dielectrics: electrically-active grain boundary and oxygen atom defect states

G Lucovsky,J Lüning

doi:10.1109/essder.2005.1546679

Intrinsic limitations for CMOS with high-k gate dielectrics: electrically-active grain boundary and oxygen atom defect states

G Lucovsky, J Lüning

https://doi.org/10.1109/essder.2005.1546679

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Publication Date: Dec 12, 2005

Citations: 3

Affiliation: North Central State College, North Carolina State University, Stanford Synchrotron Radiation Lightsource

#O-atom Vacancies #High-k Gate Dielectrics + Show 8 more

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Abstract

Chemically pure thin films of HfO/sub 2/, as well as other transition metal (TM) and rare earth (RE) elemental and complex oxides, e.g., LaScO/sub 3/ and LaAlO/sub 3/, are nanocrystalline as-deposited. The local bonding environments of TM and RE atoms are distorted with respect to ideal octahedral or cubic bonding, and degeneracies of the respective band edge d-states are completely removed by Jahn-Teller (J-T) distortions. Spectroscopic studies have revealed J-T term splittings, and additionally two localized states. The first is associated with an electronically-active defect at the nanocrystalline grain boundaries and the second with O-atom vacancies. These states are different energies within the band gaps of HfO/sub 2/ and ZrO/sub 2/.

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