Abstract
The intrinsic gettering (IG) of germanium-doped Czochralski (GCZ) silicon with different concentrations of germanium has been investigated in this paper. The conventional Czochralski (CZ) and the GCZ silicon samples were annealed using a one-step high temperature process followed by a sequence of low–high temperature annealing cycles. It was found that the good defect-free denude zones in the near surface of the GCZ silicon could be achieved using simply a one-step high temperature annealing process. Furthermore, the density of bulk microdefects as IG sites was higher than that in the CZ silicon, as a result of germanium enhancing oxygen precipitation during three-step annealing. Meanwhile, the experimental results showed that germanium also enhanced the out-diffusion of oxygen. Furthermore, it is believed that germanium doping can increase the ability of IG in CZ silicon wafers.
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