Abstract
Annealing of n- and p-type germanium quenched from 700°C to room temperature was carried out near 100°C. The disappearance of about 5 percent of quenched-in acceptors was observed from electrical resistivity measurements at 25°C. The activation energy determined was about 0.94 eV regardless of the discrepancy in species and the concentration of dopants. The number of defects which disappeared in this stage increased as the specimen thickness became smaller, or as the quenching rate increased. The experimental results are explained by attributing this annealing stage to the disappearance of divacancies which escaped the annihilation at sinks and the cluster formation during the quenching.
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