Abstract
Carrier diffusion and surface recombination are key processes influencing the performance of conventional semiconductor devices. However, the interplay of photon recycling together with these processes in halide perovskites obfuscates our understanding. Herein, we discern these inherent processes in a thin FAPbBr3 perovskite single crystal (PSC) utilizing a unique transient reflectance technique that allows accurate diffusion modeling with clear boundary conditions. Temperature-dependent measurements reveal the coexistence of shallow and deep traps at the surface. The inverse quadratic dependence of temperature on carrier mobility μ suggests an underlying scattering mechanism arising from the anharmonic deformation of the PbBr6 cage. Our findings ascertain the fundamental limits of the intrinsic surface recombination velocity (S) and carrier diffusion coefficient (D) in PSC samples. Importantly, these insights will help resolve the ongoing debate and clarify the ambiguity surrounding the contributions of photon recycling and carrier diffusion in perovskite optoelectronics.
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