Abstract
The effective mass of heavy holes has been determined on the basis of simultaneous analysis of the Hall coefficient and conductivity data obtained in the temperature region 100–300 K on well characterized p-type Hg1−xCdxTe (x≈0·2) samples. Its value is ≈0·7m0. The calculation of intrinsic carrier concentration for 0·19≦ x≦0·3 and 50 Kg ≦T≦ 300 K has been carried out using the above value of the effective mass of holes, Hansen's expression for the band gap and momentum matrix element from magneto-optical measurements.
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