Abstract
We have investigated the intrinsic carbon doping during the metalorganic vapor-phase epitaxy of Al x Ga 1− x As (0⩽ x⩽1). Carbon concentrations were determined with high-resolution X-ray diffraction and compared to hole concentrations obtained from Hall and infrared-ellipsometry measurements. AlAs compositions were derived from Rutherford backscattering spectrometry, photoluminescence, and spectroscopic ellipsometry. Carbon-doped (AlGa)As and GaAs layers have been used as p-type cladding and contact layers in (InGa)As laser structures with emission wavelengths ∼ 1.17 μm, respectively. For oxide stripe lasers we found laser activity in an emission range from 1.13 to 1.2 μm with threshold current densities between 0.25 and 1 kA/cm 2.
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