Intrinsic bulk Ga0.50V0.50As magnetic semiconductor with optical transparency at room temperature

Abstract

Searching for intrinsic magnetic semiconductors has long been pursued in the last few decades. Nonetheless, it failed to fabricate an intrinsic magnetic semiconductor at room temperature. Also, it is a challenging task to fabricate optically transparent magnetic material at room temperature. Here, we investigate the magnetic and optical properties of Ga1-xVxAs (x = 0.25, 0.5, and 0.75). We find that only the Ga0.50V0.50As structure meets all the structural stability criteria. The Ga0.50V0.50As has a ferromagnetic ground state with a Curie temperature of 478 K. The Ga0.50V0.50As has an indirect band gap of 1 eV, and also the majority spin bands locate at the conduction band minimum and valence band maximum. Thus, we can achieve 100 % spin-polarized current. Moreover, the Ga0.50V0.50As system displays optically transparent properties in the visible frequencies. Overall, we propose that the Ga0.50V0.50As can be a potential candidate as a magnetic semiconductor for transparent spintronics device applications.