Abstract
In this paper we report the first results on band gap levels associated with cation and anion vacancies at lattice matched III–V compound semiconductor interfaces. These results are contrasted with the absence of intrinsic interface states found in earlier studies of these systems. Specific results for such vacancies in bulk GaSb and InAs and in the GaSb–InAs(110) thin superlattice are reported. The behavior of both the cation and anion vacancy induced levels at the interface is significantly different from the corresponding behavior in the bulk. A study of the influence of the interface geometry on the vacancy induced levels is presented. Such effects, it is found, can be quite significant.
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