Intrasubband local-field resonances for p-polarized light in a semiconductor quantum well

Abstract

A theoretical investigation of the local-field eigenmodes associated with intrasubband transitions in a semiconductor quantum well deposited on a dielectric substrate is carried out. Using the so-called slave approximation, the eigenmodes for the local-field components along and perpendicular to the well plane are decoupled. Numerical calculations performed on a GaAs/quartz quantum-well system show that in particular the eigenmode associated with carrier motions perpendicular to the well can be modified by a change in well parameters such as the doping, thickness, and electronic relaxation time.