Abstract
The intrasubband electron-optical-phonon scattering is studied for a Si-doped thin-layer inserted GaAlAs quantum well. Including the external electric field in consideration, we solved the Schrödinger equation and Poisson equation self-consistently in order to determine the energy levels and subband wave functions of the electron states and employed the dielectric continuum model and microscopic lattice-dynamic model to obtain the interface phonon and confine phonon spectra. Our results show that the intrasubband scattering can be strongly modulated by changing the external field and adjusting the well structure parameters. This may benefit some device design and applications.
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