Abstract
Two D-B-A compounds (TRD and TTRD) were designed with the different bridges (B1 and B2) consisting of T and TT moieties. They were synthesized and investigated by UV–Vis spectra, steady state emission spectra, X-ray diffraction, electrochemical measurement, the photovoltaic performances and theoretical calculation. The large Stokes shift suggested the formation of an intramolecular charge transfer (ICT) state in the excited state. TTRD based device showed high short-circuit current density (JSC) and fill factor (FF). It was essential to understanding the underlying mechanism caused by the subtle structural difference of the two spacers. The results showed that the B2 bridge extending the electron increment region has shown a significant improvement for excitation delocalization, which played a crucial role in improving effective dissociation of the ICT excitons, leading to the increase of photogenerated charge carriers.
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