Abstract

The transient infrared absorption of hot electrons in n-doped InAs is studied in the wavelength range around 7 μm. After heating the electron gas by a picosecond infrared pulse, the free carrier absorption shows a fast rise by several ten percent, which relaxes within 100 ps. The nonequilibrium population of longitudinal optical phonons created by the cooling process is essential for the observed change of the free carrier absorption. The presented studies give valuable information on the distribution function of hot phonons.

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