Abstract
AbstractThe intraband relaxation time is investigated theoretically for InGaNAs/InGaNAs/GaAs QW lasers. The result is compared with that obtained from comparison between the experimental gain spectra and theoretical gain. The InGaNAs/InGaNAs QW shows smaller intraband relaxation time than InGaAs/InGaAsP QW. This is due to the fact that the InGaNAs/InGaNAs structure has larger electron effective masses than the InGaAs/InGaAsP QW. The calculated gain spectra is in good agreement with the experiment. The intraband relaxation time τin obtained from fitting the experimental data is 60 fs. This value reasonably agrees well with the calculated value of 62 fs at the subband edge, considering that the electrons and the holes are mostly near the subband edge. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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