Abstract
This work consists of two parts. In the first part we determine the static-conductivity relaxation time \ensuremath{\tau} as a function of temperature for highly excited silicon. The anisotropy and many-valley character of the conduction band are fully taken into account. The anisotropy leads to additional contributions to 1/\ensuremath{\tau} from electron-electron scattering. The second part is devoted to the dynamical relaxation time of a model semiconductor. Here the dependence on frequency, temperature, and plasma density is explored, and from these results the optical properties of the plasma are determined.
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