Abstract
Intraband relaxation time is investigated theoretically for a compressive-strained quantum well by considering carrier-carrier and carrier-longitudinal optical (LO) phonon scattering mechanisms. It is found that the spectral broadening factor decreases from 10 meV in the lattice-matched quantum well to about 5 meV in the strained quantum well. This is mainly attributed to the reduction of the hole effective mass due to the strain effect. Dependence of the intraband relaxation time on carrier density and well width is also discussed.
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