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Abstract
Mid-infrared barrier detectors constructed from intraband colloidal quantum dots brings the advantage of greatly simplified device fabrication procedure with the potential for high temperature operation. Here, we report the fabrication and characterization of vertically-stacked Ag2Se / PbS / Ag2Se quantum dot barrier devices with improved infrared responsivity. Through optimizing the energy level alignment, 4.5 μm responsivity now reaches 84.1 mA/W which results in 570% improvement in specific detectivity compared to the first generation quantum dot barrier devices.
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