Intraband optical transition in InGaAs/GaAs pyramidal quantum dots

Abstract

We present the results of our numerical analysis of intraband optical transitions within the valence band of InxGa1−xAs/GaAs pyramidal quantum dots. We study the possibility of tuning of the corresponding absorption spectra by varying the size and composition of the dots. The composition of the dot is varied by changing the value of ‘x’ between x = 0.1 and x = 1.0. The size of the quantum dot base is varied from 5 nm to 21 nm. The absorption spectra are calculated within the eight-band k.p model, which includes the effects of strain. The absorption spectra of the quantum dots are more sensitive to the in-plane, i.e., perpendicular to the growth direction and polarization of the incident light.