Abstract
We study the intraband energy-relaxation of excitons localized at a stacking fault interface in a layered crystal BiI 3 observing the temporal behavior of the luminescence. The relaxation processes in this system are investigated by analyzing the time-resolved luminescence of a phonon sideband which directly reflects the exciton distribution in the band. When the exciton is resonantly excited by a picosecond laser pulse, the exciton population reveals a `hot' distribution at an early stage. The effective temperature decreases immediately according to the intraband energy-relaxation via the interaction with phonons, and after ∼40 psec, the distribution almost reaches the thermal equilibrium with the lattice. We obtain the consistent population relaxation time ( T 1 ) from the three-beam degenerate four-wave mixing signals.
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