Abstract
A three-pulse transient grating technique was used to measure the carrier dynamics in photoexcited GaAs. The four-wave mixing signal exhibits a two component relaxation of different magnitudes for various probe energies. The fast relaxation mechanism is due to electrons in the L valleys scattering back to the Γ valley. The effective transfer time for L→Γ was found to be ≊8 ps. The slower relaxation arises from carrier recombination.
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