Abstract
The change in electron mobility of n-Si with increasing the temperature which may be due to the inclusion of gLOphonon energy of 720 K, is presented. Under orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The f-transitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 77 to 450 K. So, no appreciable contribution of g-transitions to intervalley scattering occurs, while the observed is the decisive role of f-transitions to intervalley scattering. The results of measuring of the tensoresistivity effect for n-Si crystals under X//[001]//J are presented at these temperatures too.
Highlights
[1], the crucial role of f-transitions in intervalley scattering of electrons in n-Si with strong uniaxial pressures X//[001] and temperatures to 300 K was first demonstrated
In this work we used the tensoresistivity (TR) effect at different directions of uniaxial pressure and temperature dependence of resistivity = (Т) in uniaxial deformed and undistorted crystal n-Si for the temperature range T = 77 450 K. This temperature range covers the region of intrinsic conductivity of silicon crystals, so all conclusions about the impact of f- and g-transitions are limited to the temperature at which the intrinsic conductivity sets in
It is shown that at X//[001] when the f-transitions are completely eliminated the slope of the lg μ - lg T dependence changes from −2.3 to −1.6
Summary
[1], the crucial role of f-transitions in intervalley scattering of electrons in n-Si with strong uniaxial pressures X//[001] and temperatures to 300 K was first demonstrated. With strong intervalley scattering in uniaxial pressures, f-transitions between valleys [001] and [100] and [ī00]; [00ī] and [100] and [ī00]; [001] and [0ī0] and [010]; and [00ī] and [0ī0] and [010] (Figure 1) are excluded, and their intensity as compared to that in unstrained crystals decreases This type of experiment gives us confidence that if there is significant contribution of gLO-conversion to the intervalley scattering of electrons in silicon at T = 77 450 K. “Intel Corporation” introduced n-MOS transistors with silicon uniaxial deformed in the direction [001] channels, increase the mobility of electrons around twice at T = 300 K [8,9] This increase is due to removal of intervalley scattering related with f-transitions, thereby increasing the steepness of the currentvoltage characteristics (CVC) and cutoff frequency of switching
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