Abstract
We have demonstrated a new type of infrared photodetector based on infrared intersubband transitions in doped quantum wells in which the excited state is confined by the minigap between two minibands in surrounding superlattice barrier layers. Sharp peaks in the infrared photocurrent spectra were observed at 78 K in the 2.7–3.6 μm wavelength region corresponding to transitions in which the excited state energy is substantially above the conduction band edge of the higher-bandgap component of the superlattice. This indicates that the excited state is strongly confined within the well layer by the forbidden-energy minigap region between two allowed minibands. Broader, longer-wavelength photocurrent features corresponding to transitions into the lower-lying miniband states were also observed. The spectral features in the photocurrent spectra are well described by calculations of the optical absorption cross-section, and the relative magnitudes of these features are shown to be strongly affected by bias-dependent photocarrier transport.
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