Abstract
Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. An order of magnitude enhancement of the electron spin lifetime in (001) silicon thin films by shear strain is shown. It is demonstrated that spin-flip scattering processes between the two [001] valleys are responsible for spin relaxation in thin (001) silicon films. The enhancement of the spin lifetime is the result of the suppression of inter-valley scattering caused by the shear strain induced equivalent [001] valley splitting.
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