Abstract
A review is given on the optical spectroscopy of electronic states in conduction subbands of III-V compound quantum well structures. By appropriate choice of well and barrier material, and in particular the well thickness, the intersubband transition can be tuned from about 3.5 μm to longer wavelengths over the entire infrared range.The dependence of the absorption energy and lineshape on temperature has been studied for both well and modulation doping in GaAs/AlGaAs quantum wells. The lineshape analysis gives the single energy state width by deconvoluting the width due to the level-dependent dispersion.Various application schemes of intersubband transitions in infrared photodetectors and lasers are discussed.
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